Quantum well laser

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The particle in a box model can be applied to quantum well lasers, which are laser diodes consisting of one semiconductor “well” material sandwiched between two other semiconductor layers of different material . Because the layers of this sandwich are very thin (the middle layer is typically about 100 Å thick), quantum confinement effects can be observed [1]. The idea that quantum effects could be harnessed to create better laser diodes originated in the 1970s. The quantum well laser was patented in 1976 by R. Dingle and C. H. Henry[2]

Specifically, the quantum well’s behavior can be represented by the particle in a finite well model.  Two boundary conditions must be selected. The first is that the wave function must be continuous. Often, the second boundary condition is chosen to be the derivative of the wave function must be continuous across the boundary, but in the case of the quantum well the masses are different on either side of the boundary. Instead, the second boundary condition is chosen to conserve particle flux as , which is consistent with experiment. The solution to the finite well particle in a box must be solved numerically, resulting in wave functions that are sine functions inside the quantum well and exponentially decaying functions in the barriers[3]. This quantization of the energy levels of the electrons allows a quantum well laser to emit light more efficiently than conventional semiconductor lasers.

  1. ^ Zory, Peter (1993). Quantum Well Lasers. San Diego: Academic Press Unlimited.
  2. ^ U.S. Patent #3,982,207, issued September 21, 1976, Inventors R. Dingle and C. H. Henry ,"Quantum Effects in Heterostructure Lasers", filed March 7, 1975.
  3. ^ Miller, David (1995). Burstein, Elias; Weisbuch, Claude (eds.). Confined Electrons and Photons: New Physics and Applications. New York: Plenum Press. pp. 675–702.