Talk:Johnson's figure of merit

Conditions and examples

Presumably the 'conditions' includes the temperature; but what else ?
A small table of some examples would be very helpful. - Ge, Si, GaAs, GaN, SiC ? - Rod57 (talk) 09:09, 1 January 2016 (UTC)

Table in section 'Example materials'

The products of the breakdown field and the saturation velocity do not result in the given values of JFM. Only the value for GaN is calculate right. I could not find a source with correct values, so I suggest to delete the table.

possible sources

• High- f_MAX High Johnson's Figure-of-Merit 0.2-μm Gate AlGaN/GaN HEMTs on Silicon Substrate With AlN/SiN_x Passivation JFM = 6.43 × 10¹² V/s
• High Johnson's figure of merit (8.32 THz V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon 8.32 × 10¹² V/s
• (AlGaN may be variable Al substitution of Ga)
• [1] Table 1.1-1 (p15) lists JFM (relative to Si) : Si=1, GaAs=7, GaInP=16, 4H-SiC=282, GaN=282. Also tabulates Baliga's and Keyes' figures of merit.
• Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014 Table IV (p 5) lists JFM (relative to Si) : Si=1, GaAs=2.7, SiC=20, InP=0.33, GaN=27.5 (probably more reliable than wu), also shows V_sat and E_breakdown. - Rod57 (talk) 05:07, 2 January 2016 (UTC)
• Why diamond? gives very different figures (but no refs) :

      Si   GaAs   GaN   SiC   diamond
JFM    1    11    790   410   5800 - Rod57 (talk) 09:46, 6 January 2016 (UTC)