Mitiko Miura-Mattausch (Japanese: 三浦 道子, born 1949)[1] is a Japanese electronics engineer specializing in the design, modeling, and simulation of electronic components based on semiconductors, including MOSFETs and new models for transistors in LDMOS. She is a professor at Hiroshima University.[2][3]
Education and career
editMiura-Mattausch has a doctorate from Hiroshima University.[4] She was a researcher in Germany at the Max Planck Institute for Solid State Research from 1981 to 1984, and at Siemens from 1984 to 1996. In 1996 she returned to Japan as a professor in the Hiroshima University Faculty of Engineering, taking a special appointment in 2015 with the HiSIM (Hiroshima-University STARC IGFET Model) Research Center.[2]
Recognition
editMiura-Mattausch was elected as an IEEE Fellow in 2007, "for contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling".[5]
Books
editMiura-Mattausch is the author or editor of:
- Ultra-Fast Silicon Bipolar Technology (edited with Ludwig Treitinger, Springer, 1988)
- The Physics and Modeling of MOSFETs: Surface-Potential Model HiSIM (with Hans Jürgen Mattausch and Tatsuya Ezaki, World Scientific, 2008)
References
edit- ^ Miura-Mattausch, Mitiko, German National Library, retrieved 2024-08-31
- ^ a b "Mentor Interview: Prof.Mitiko MIURA", Taoyaka Program, Hiroshima University, 2015, retrieved 2024-08-31
- ^ "Professor Mitiko Miura", Research NOW, Hiroshima University, 10 March 2008, retrieved 2024-08-31
- ^ "Mitiko Miura-Mattausch", IEEE Xplore, IEEE, retrieved 2024-08-31
- ^ IEEE Fellows directory, IEEE, retrieved 2024-08-31