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Summary
| Description |
English: Current-voltage characteristics (IVC) of a single electron transistor (SET) showing maximum and minimum blockade (top left), and modulation curves for two different bias schemes. In R-bias (left bottom), the SET is biased from a voltage source via a high ohmic resistor, whose value determines the inclination of the trace in the IVC (the load line) as the gate voltage is varied. In V-bias (top right), the voltage across the SET is held constant by an operational amplifier setup (causing a vertical trace in the IVC), and the current is modulated with a periodicity in the gate voltage corresponding to a difference of one elementary charge induced on the gate.
Deutsch: Strom-Spannungs-Charakteristik eines Einzelelektronentransistor. Oben links wird die maximale und minimale Blockade und die Modulationskurve für zwei verschiedene Vorspannungsdiagramme grafisch dargestellt. |
| Date | Göteborg 1999 |
| Source | Created by Torsten Henning and published in Charging effects in niobium nanostructures, PhD thesis, Mikroelektronik och Nanovetenskap, Chalmers Tekniska Högskola AB och Göteborgs Universitet, Göteborg 1999. Full text available online [1] as www.arxiv.org e-print cond-mat/9901308. |
| Author | Torsten Henning |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 12:50, 12 October 2005 | | 2,075 × 2,442 (172 KB) | DrTorstenHenning | {{English}} Current-voltage characteristics (IVC) of a single electron transistor (SET) showing maximum and minimum blockade (top left), and modulation curves for two different bias schemes. In R-bias (left bottom), the SET is biased from a voltage sourc |
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