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Summary
| Description | Luminescence map of the silicon-vacancy center in diamond, which was created by implanting Si ions. Top: x–y surface scan; bottom: x–z depth scan at position where a thin red dot line was marked in a, yellow-dashed line indicates the diamond sample surface. |
| Date | |
| Source | http://www.nature.com/articles/srep12244 |
| Author | Yan Liu, Gengxu Chen, Youying Rong, Liam Paul McGuinness, Fedor Jelezko, Syuto Tamura, Takashi Tanii, Tokuyuki Teraji, Shinobu Onoda, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, E Wu & Heping Zeng |
| Permission (Reusing this file) |
  This file is licensed under the Creative Commons Attribution 4.0 International license.
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File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 05:50, 15 March 2017 | | 1,744 × 2,512 (1.69 MB) | Materialscientist | =={{int:filedesc}}== {{Information |description=Luminescence map of the silicon-vacancy center in diamond, which was created by implanting Si ions. Top: x–y surface scan; bottom: x–z depth scan at position where a thin red dot line was marked in a,... |
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