Original file (743 × 973 pixels, file size: 87 KB, MIME type: image/png)
| Description |
Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987). |
|---|---|
| Source |
Own work |
| Date |
05 December 2007 |
| Author | |
| Permission (Reusing this file) |
See below.
|
Summary edit
Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987).
Licensing edit
 | I, the copyright holder of this work, hereby release it into the public domain. This applies worldwide. If this is not legally possible: |
 | This file is a candidate to be copied to Wikimedia Commons.
Any user may perform this transfer; refer to Wikipedia:Moving files to Commons for details. If this file has problems with attribution, copyright, or is otherwise ineligible for Commons, then remove this tag and DO NOT transfer it; repeat violators may be blocked from editing. Other Instructions
| ||
| |||
File history
Click on a date/time to view the file as it appeared at that time.
| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 04:07, 5 December 2007 | | 743 × 973 (87 KB) | Sgptch (talk | contribs) | Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987). |
You cannot overwrite this file.
